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4寸晶棒

2014-08⑶1




Item


4"Specification

Unit

Remark


Substrate grade


Sapphire Ingot

~

 


Crystal growth method


Kyropulos Al2O3 or another on agreement

~

 


Optical Characteristic


High purity optical grade monocrystalline

~

 


Orientation


C-plane(0001) ±0.1

~

 


Diameter of ingot


100.2,±0.1

mm

 


Length of Prime flat


30.0±0.5

mm

 


Orientation of Prime flat


A-plane(1 1⑵ 0)± 0.2

~

 


Rod Length


50

mm

 


Surface Finish


Circumference surface Ra < 1 μm; Both ends surface Ra < 1 μm

μm

 


Chip size on both sides

< 0.5 mm x 0.5 mm

~

 

Crystal Bubble/Defects Percentage


< 15%

~


Defects zones include bubbles, scattering centers, grain boundary, twinning, inclusion, stress distortion, and cracks inside. Defect zones need to be marked